core Estimated learning time: 10 h

PE1-1.3 Oxide Growth & Lithography

You can describe the structure of SiO2 and thermal oxide growth mechanisms, and work through the photolithography sequence including resists, exposure systems, steppers and X-ray or electron beam lithography.

Lithography is the step that sets the minimum feature size, so it is the step that has paced the entire semiconductor industry for fifty years — everything else follows what the printing can resolve. Photoresist chemistry is worth understanding as a two-family system, positive and negative, because which you choose inverts your mask. Thermal oxidation is the process that made silicon dominant: growing an insulator out of the substrate itself is a trick no competing material matched.

Work through these

  • Structure of SiO2

    What the oxide actually is at the atomic level, before how it is grown. Its amorphous structure is why it insulates so well and why it can be grown at all.

  • Oxide growth mechanism and dynamics

    The model of how the layer thickens, which is fast at first and then slows as oxygen has further to travel. That shape explains the growth times quoted in every recipe.

  • Oxide growth by the thermal method

    Growing it with heat and oxygen, in dry or wet form. Dry is slower and better quality, which is why gate oxides use it and thick field oxides do not.

  • Steps involved in photolithography

    The sequence that transfers a pattern onto the wafer, which is the step everything else is arranged around. Learn the order once and the variants below make sense.

  • Photoresists and their characteristics

    The light-sensitive layer that records the pattern, and the properties that matter: resolution, contrast and resistance to the etch that follows.

  • Optical exposure systems: contact and projection

    Two ways to get the mask image onto the resist. Contact gives resolution and damages the mask; projection does not touch it, which is why production uses it.

  • Steppers

    Projection over one small area at a time, moving between exposures. It is how a large wafer is patterned with optics that could never cover it in one shot.

  • X-ray lithography and electron beam lithography

    The alternatives for features smaller than the light can resolve. Both are slower, which is why the industry pushed optical lithography far longer than anyone expected.

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